1998. 6. 15 1/2 semiconductor technical data mmbta92/93 epitaxial planar pnp transistor revision no : 1 high voltage application. telephone application. features complementary to mmbta42/43. maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 1 ) *pulse test : pulse width # 300 s, duty cycle # 2.0% * : package mounted on 99.5% alumina 10 ' 8 ' 0.6mm. characteristic symbol rating unit collector-base voltage mmbta92 v cbo -300 v MMBTA93 -200 collector-emitter voltage mmbta92 v ceo -300 v MMBTA93 -200 emitter-base voltage v ebo -5.0 v collector current i c -500 ma emitter current i e 500 ma collector power dissipation p c * 350 mw junction temperature t j 150 1 storage temperature t stg -55 150 1 type name marking mmbta92 MMBTA93 lot no. yv type name lot no. yw characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage mmbta92 v (br)cbo i c =-100 a, i e =0 -300 - - v MMBTA93 -200 - - collector-emitter breakdown voltage mmbta92 v (be)ceo i c =-1.0ma, i b =0 -300 - - v MMBTA93 -200 - - dc current gain * h fe i c =-1.0ma, v ce =-10v 25 - - i c =-10ma, v ce =-10v 40 - - i c =-30ma, v ce =-10v 25 - - collector-emitter saturation voltage * v ce(sat) i c =-20ma, i b =-2.0ma - - -0.5 v base-emitter saturation voltage * v be(sat) i c =-20ma, i b =-2.0ma - - -0.9 v transition frequency f t v ce =-20v, i c =-10ma, f=100mhz 50 - - mhz collector output capacitance mmbta92 c ob v cb =-20v, i e =0, f=1mhz - - 6.0 pf MMBTA93 - - 8.0
1998. 6. 15 2/2 mmbta92/93 revision no : 1 transition frequency f (mhz) 0 t -30 -10 -3 -1 collector current i (ma) c f - i c - v r reverse voltage v (v) -0.1 -0.3 -1 -3 ob 1 collector output capacitance saturation voltage 0 be(sat), -30 -10 -3 -1 collector current i (ma) c v v - i h - i c collector current i (ma) -1 -3 -10 -30 300 fe dc current gain h 10 ob r c (pf) -10 -30 -100 -300 -1k 3 5 10 30 50 100 c ib ob c tc -100 -5 -50 30 50 100 t =25 c v =20v j ce be(sat) , c v v (v) -100 -5 -50 -0.2 -0.4 -0.6 -0.8 -1.0 v i /i =10 v be(sat) c b ce(sat) ce(sat) fe c -100 -5 -50 100 30 50 t =125 c j j t =25 c j t =-55 c ce v =10v ce(sat)
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